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| BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T-13/4 plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs (l=950nm) and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links according to the IrDA standard. 94 8390 Features D D D D D D Extra fast response times High modulation bandwidth (>100 MHz) High radiant sensitivity Radiant sensitive area A=0.78mm2 Low junction capacitance Standard T-13/4 (o 5 mm) package with universal IR filter D Angle of half sensitivity = 20 Applications Infrared high speed remote control and free air transmission systems with high modulation frequencies or high data transmission rate requirements , especially for direct point to point links. BPV10NF is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK- coded, 450 kHz or 1.3 MHz). Recommended emitter diodes are TSHF 5...-series or TSSF 4500. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Tamb Symbol VR PV Tj Tamb Tstg Tsd RthJA Value 60 215 100 -55...+100 -55...+100 260 350 Unit V mW C C C C K/W x 25 C x5s 2 mm from body, t Document Number 81503 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 1 (5) BPV10NF Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Open Circuit Voltage Short Circuit Current Reverse Light Current Test Conditions IF = 50 mA IR = 100 mA, E = 0 VR = 20 V, E = 0 VR = 0 V, f = 1 MHz, E = 0 Ee = 1 mW/cm2, l = 870 nm Ee = 1 mW/cm2, l = 870 nm Ee = 1 mW/cm2, l = 870 nm, VR = 5 V Ee = 1 mW/cm2, l = 950 nm, VR = 5 V Ee = 1 mW/cm2, l = 870 nm, VR = 5 V VR = 5 V, l = 870 nm Symbol VF V(BR) Iro CD Vo Ik Ira Ira TKIra s(l) Min 60 1 11 450 50 55 30 60 -0.1 0.55 20 940 790...1050 70 3x10-14 3x1012 2.5 2.5 5 Typ 1 Max 1.3 Unit V V nA pF mV mA mA mA Temp. Coefficient of Ira %/K A/W deg nm nm % W/ Hz cmHz/ W ns ns Absolute Spectral Sensitivity Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Quantum Efficiency l = 950 nm Noise Equivalent Power VR=20 V, l=950 nm Detectivity VR=20 V, l=950 nm Rise Time Fall Time lp l0.5 h tr tf NEP D* l=820 nm VR=50 V, RL=50 W, VR=50 V, RL=50 l=820 nm W, Typical Characteristics (Tamb = 25_C unless otherwise specified) I ra rel - Relative Reverse Light Current 1000 I ro - Reverse Dark Current ( nA ) 1.4 1.2 100 1.0 10 0.8 VR=5V Ee=1mW/cm2 VR=20V 1 20 94 8436 l=870nm 40 0.6 40 60 80 100 94 8621 0 20 60 80 100 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 1. Reverse Dark Current vs. Ambient Temperature Figure 2. Relative Reverse Light Current vs. Ambient Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (5) Document Number 81503 Rev. 2, 20-May-99 BPV10NF Vishay Telefunken S ( l ) rel - Relative Spectral Sensitivity 10 94 8426 1000 Ira - Reverse Light Current ( m A ) 1.2 1.0 0.8 0.6 0.4 0.2 0 750 100 10 VR=5V l=870nm 1 0.1 0.01 94 8622 0.1 1 850 950 1050 1150 Ee - Irradiance ( mW / cm2 ) l - Wavelength ( nm ) Figure 3. Reverse Light Current vs. Irradiance 100 Ira - Reverse Light Current ( m A ) 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 0.02 mW/cm2 0.1 94 8623 Figure 6. Relative Spectral Sensitivity vs. Wavelength 0 10 20 30 S rel - Relative Sensitivity 40 1.0 0.9 0.8 0.7 50 60 70 80 l=870nm 10 1 1 10 100 94 8624 0.6 0.4 0.2 0 0.2 0.4 0.6 VR - Reverse Voltage ( V ) Figure 4. Reverse Light Current vs. Reverse Voltage Figure 7. Relative Radiant Sensitivity vs. Angular Displacement 12 CD - Diode Capacitance ( pF ) 10 8 6 4 2 0 0.1 94 8439 E=0 f=1MHz 1 10 100 VR - Reverse Voltage ( V ) Figure 5. Diode Capacitance vs. Reverse Voltage Document Number 81503 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 3 (5) BPV10NF Vishay Telefunken Dimensions in mm 96 12198 www.vishay.de * FaxBack +1-408-970-5600 4 (5) Document Number 81503 Rev. 2, 20-May-99 BPV10NF Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 81503 Rev. 2, 20-May-99 www.vishay.de * FaxBack +1-408-970-5600 5 (5) |
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